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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9520282 B1

PDFFull Text
Date of Patent:
Dec. 13, 2016

Filed:

May. 21, 2015

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

Applicant:

Hitachi Kokusai Electric Inc., Tokyo, JP;

Inventors:

Katsuyoshi Harada, Toyama, JP;

Yoshiro Hirose, Toyama, JP;

Tsukasa Kamakura, Toyama, JP;

Atsushi Sano, Toyama, JP;

Yugo Orihashi, Toyama, JP;

Assignee:

HITACHI KOKUSAI ELECTRIC INC., Tokyo, JP;

Attorney:

Volpe and Koenig, P.C.

Primary Examiner:

Scott B Geyer

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/67 (2006.01); H01L 21/3205 (2006.01); C23C 16/02 (2006.01); C23C 16/24 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); C23C 16/0272 (2013.01); C23C 16/24 (2013.01); C23C 16/4408 (2013.01); C23C 16/45523 (2013.01); C23C 16/52 (2013.01); H01L 21/02205 (2013.01); H01L 21/02304 (2013.01); H01L 21/32055 (2013.01); H01L 21/67017 (2013.01);
Abstract

A method of manufacturing a semiconductor device is provided. The method includes treating a surface of an insulating film formed on a substrate by supplying a first gas containing a halogen group to the substrate, and forming a thin film containing a predetermined element on the treated surface of the insulating film by performing a cycle a predetermined number of times. The cycle includes supplying a second gas containing the predetermined element and a halogen group to the substrate, and supplying a third gas to the substrate.

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