The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2016
Filed:
Mar. 11, 2014
Applicant:
Epistar Corporation, Hsinchu, TW;
Inventor:
Ai-Sen Liu, Hsinchu, TW;
Assignee:
EPISTAR CORPORATION, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 33/42 (2010.01); H01L 33/60 (2010.01); H01L 33/00 (2010.01); H01L 33/16 (2010.01);
U.S. Cl.
CPC ...
H01L 21/02203 (2013.01); H01L 21/0254 (2013.01); H01L 21/02458 (2013.01); H01L 21/02461 (2013.01); H01L 21/02513 (2013.01); H01L 21/02656 (2013.01); H01L 21/02543 (2013.01); H01L 33/0079 (2013.01); H01L 33/16 (2013.01); H01L 33/42 (2013.01); H01L 33/60 (2013.01);
Abstract
A method of fabricating an epitaxial device, comprising: providing a substrate having a first surface and a normal direction; epitaxially forming a first transition layer in a first temperature on the first surface of the substrate and in-situ incorporating a porogen into the first transition layer; and adjusting the first temperature to a second temperature to burn out the porogen from the first transition layer to form a hollow component inside the first transition layer.