The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2016
Filed:
Aug. 25, 2014
Ludovic Godet, Sunnyvale, CA (US);
Jun Xue, San Jose, CA (US);
Prashanth Kothnur, San Jose, CA (US);
Umesh M. Kelkar, Santa Clara, CA (US);
Matthew D. Scotney-castle, Morgan Hill, CA (US);
Ludovic Godet, Sunnyvale, CA (US);
Jun Xue, San Jose, CA (US);
Prashanth Kothnur, San Jose, CA (US);
Umesh M. Kelkar, Santa Clara, CA (US);
Matthew D. Scotney-Castle, Morgan Hill, CA (US);
Applied Mateirals, Inc., Santa Clara, CA (US);
Abstract
The angular ion distribution in plasma processing is controlled using a bias voltage frequency. In one example, a plasma containing gas ions is generated in a plasma chamber. The plasma sheath is modified using an aperture disposed between the plasma sheath and the workpiece so that the plasma sheath takes a shape above the aperture. An oscillating radio frequency bias voltage is generated and applied to a workpiece holder. The workpiece holder applies the bias voltage to the workpiece to generate a workpiece bias voltage with respect to the plasma to attract ions across the plasma sheath toward the workpiece. The aperture and the frequency of the bias voltage control an angle at which the ions are attracted toward the workpiece.