The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2016
Filed:
May. 13, 2011
Noritsugu Sakuma, Toyota, JP;
Hidefumi Kishimoto, Toyota, JP;
Akira Kato, Toyota, JP;
Tetsuya Shoji, Toyota, JP;
Dominique Givord, Grenoble, FR;
Nora Dempsey, Grenoble, FR;
Thomas George Woodcock, Dresden, DE;
Oliver Gutfleisch, Darmstadt, DE;
Gino Hrkac, Exeter, GB;
Thomas Schrefl, Herzogenburg, AT;
Noritsugu Sakuma, Toyota, JP;
Hidefumi Kishimoto, Toyota, JP;
Akira Kato, Toyota, JP;
Tetsuya Shoji, Toyota, JP;
Dominique Givord, Grenoble, FR;
Nora Dempsey, Grenoble, FR;
Thomas George Woodcock, Dresden, DE;
Oliver Gutfleisch, Darmstadt, DE;
Gino Hrkac, Exeter, GB;
Thomas Schrefl, Herzogenburg, AT;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Aichi-ken, JP;
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, Paris, FR;
LEIBNIZ INSTITUTE FOR SOLID STATE AND MATERIALS RESEARCH DRESDEN, Dresden, DE;
UNIVERSITY OF SHEFFIELD, Sheffield, GB;
Abstract
A rare earth magnet, which is represented by a neodymium magnet (NdFeB) and neodymium magnet films with applications in micro-systems. A method for producing a rare earth magnet, comprising: (a) quenching a molten metal having a rare earth magnet composition to form quenched flakes of nanocrystalline structure; sintering the quenched flakes; subjecting the sintered body obtained to an orientation treatment; and applying a heat treatment with pressurization at a temperature sufficiently high to enable diffusion or fluidization of a grain boundary phase and at the same time, low enough to prevent coarsening of the crystal grains, (b) thick films deposited on a substrate, applying an annealing to crystallize with pressurization at a temperature sufficiently high to enable diffusion or fluidization of a grain boundary phase and, at the same time, low enough to prevent coarsening of the crystal grains.