The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2016
Filed:
May. 11, 2015
The Penn State Research Foundation, University Park, PA (US);
Elizabeth K. Michael, State College, PA (US);
Susan Trolier-McKinstry, State College, PA (US);
The Penn State University, University Park, PA (US);
National Science Foundation, Arlington, VA (US);
Abstract
Both single phase lead-free cubic pyrochlore bismuth zinc niobate (BZN)-based dielectric materials with a chemical composition of BiZnNbTaO, with 0≦x<0.23 and 0≦y<0.9 and films with these average compositions with BiOparticles in an amorphous matrix and a process of manufacture thereof. The crystalline BZNT-based dielectric material has a relative permittivity of at least 120, a maximum applied electric field of at least 4.0 MV/cm at 10 kHz, a maximum energy storage at 25° C. and 10 kHz of at least 50 J/cmand a maximum energy storage at 200° C. and 10 kHz of at least 22 J/cm. The process is a wet chemical process that produces thin films of BiZnNbTaOwithout the use of 2-methoxyethanol and pyridine.