The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2016
Filed:
Feb. 29, 2016
Applicant:
Freescale Semiconductor, Inc., Austin, TX (US);
Inventors:
Frank K. Baker, Jr., Austin, TX (US);
Michael A. Sadd, Austin, TX (US);
Anirban Roy, Austin, TX (US);
Bruce L. Morton, Lakeway, TX (US);
Assignee:
FREESCALE SEMICONDUCTOR, INC., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 11/165 (2013.01); G11C 11/16 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01);
Abstract
A memory device includes a first memory cell having a first transistor, a second transistor, and a resistive storage element. During a read operation, sense current is conducted through the second transistor and the first transistor is used to sense feedback voltage at a first terminal of the resistive storage element. During a write operation, current is conducted through the first and second transistors.