The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 06, 2016

Filed:

Jan. 14, 2016
Applicant:

Seiko Epson Corporation, Tokyo, JP;

Inventor:

Shigenori Isozaki, Tatsuno, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03M 1/66 (2006.01); H01L 27/06 (2006.01); H01L 49/02 (2006.01); H01L 27/02 (2006.01); H01L 29/49 (2006.01); H01L 27/092 (2006.01); H03B 5/02 (2006.01);
U.S. Cl.
CPC ...
H03M 1/66 (2013.01); H01L 27/0207 (2013.01); H01L 27/0629 (2013.01); H01L 27/092 (2013.01); H01L 28/20 (2013.01); H01L 29/4916 (2013.01); H03B 5/02 (2013.01);
Abstract

A D/A conversion circuit includes a plurality of resistors that are connected to each other in series, and a plurality of MOS transistors that are connected to terminals of the plurality of resistors, respectively. The plurality of resistors and the plurality of MOS transistors are formed on a semiconductor substrate. Each of the plurality of resistors is constituted by a resistive element and a plurality of contacts provided in the resistive element. The plurality of MOS transistors are disposed so that a plurality of virtual straight lines that pass through each of the plurality of contacts and are perpendicular to a longitudinal direction of the resistive element pass between gate electrodes of two adjacent MOS transistors, when seen in a plan view of the semiconductor substrate.


Find Patent Forward Citations

Loading…