The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2016
Filed:
Sep. 21, 2015
SK Hynix Inc., Icheon-Si, KR;
Sang-Soo Kim, Icheon-si, KR;
Jung-Nam Kim, Icheon-Si, KR;
SK hynix Inc., Icheon-Si, KR;
Abstract
A method for fabricating an electronic device including a semiconductor memory may include: forming a first interlayer dielectric layer over a substrate to have an opening exposing the substrate; forming a bottom electrode in a portion of the opening to have an exposed top surface; forming a variable resistance material layer along sidewalls of the remaining portion of the opening and the exposed top surface of the bottom electrode; forming a top electrode over the variable resistance material layer so as to fill the opening; etching the first interlayer dielectric layer to a predetermined depth to expose a part of the variable resistance material layer surrounding sidewalls of the top electrode; and removing the part of the variable resistance material layer to form a unit cell.