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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9515228 B1

PDFFull Text
Date of Patent:
Dec. 06, 2016

Filed:

Dec. 01, 2014

Group iii nitride semiconductor light-emitting device

Applicant:

Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;

Inventors:

Shingo Totani, Kiyosu, JP;

Masashi Deguchi, Kiyosu, JP;

Naoki Nakajo, Kiyosu, JP;

Assignee:

TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-Ken, JP;

Attorney:

McGinn IP Law Group, PLLC

Primary Examiner:

Hoang-Quan Ho

Int. Cl.
CPC ...
H01L 33/02 (2010.01); H01L 33/38 (2010.01); H01L 33/44 (2010.01); H01L 33/46 (2010.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01); H01L 33/40 (2010.01);
U.S. Cl.
CPC ...
H01L 33/46 (2013.01); H01L 33/0025 (2013.01); H01L 33/06 (2013.01); H01L 33/32 (2013.01); H01L 33/382 (2013.01); H01L 33/385 (2013.01); H01L 33/387 (2013.01); H01L 33/405 (2013.01); H01L 2933/0025 (2013.01);
Abstract

A face-up-type Group III nitride semiconductor light-emitting device includes a growth substrate, an n-type layer, a light-emitting layer, a p-type layer, an n-electrode including a bonding portion and a wiring portion, a p-electrode including a bonding portion and a wiring portion, and a first insulating film. The n-type layer, the light-emitting layer, and the p-type layer are sequentially stacked on the growth substrate, and the n-electrode and the p-electrode are formed on the first insulating film. A groove having a depth extending from a top surface of the p-type layer to the n-type layer is formed in at least one region selected from a region directly below the wiring portion of the n-electrode and a region directly below the wiring portion of the p-electrode. The wiring portion, which is formed in the groove, is located at a level lower than that of the light-emitting layer.

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