The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2016
Filed:
Dec. 10, 2015
Applicant:
Anvil Semiconductors Limited, Warwickshire, GB;
Inventor:
Peter Ward, Cambridgeshire, GB;
Assignee:
Anvil Semiconductors Limited, Warwickshire, GB;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/12 (2010.01); H01L 21/02 (2006.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/12 (2013.01); H01L 21/0254 (2013.01); H01L 21/0259 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02447 (2013.01); H01L 21/02513 (2013.01); H01L 33/007 (2013.01); H01L 33/0095 (2013.01); H01L 33/32 (2013.01);
Abstract
We disclose a semiconductor structure comprising a monocrystalline silicon wafer; spaced apart monocrystalline silicon carbide layers disposed directly on the silicon wafer; amorphous and/or polycrystalline silicon carbide layers disposed directly on the silicon wafer between the monocrystalline silicon carbide layers; first gallium nitride layers disposed on the monocrystalline silicon carbide layers; and second gallium nitride layers disposed on the amorphous and/or polycrystalline silicon carbide layers.