The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 06, 2016

Filed:

Jan. 26, 2015
Applicant:

Lg Electronics Inc., Seoul, KR;

Inventors:

Kyoungsoo Lee, Seoul, KR;

Seongeun Lee, Seoul, KR;

Assignee:

LG ELECTRONICS INC., Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/06 (2012.01); H01L 31/0376 (2006.01); H01L 31/04 (2014.01); H01L 27/142 (2014.01); H01L 31/068 (2012.01); H01L 31/18 (2006.01); H01L 25/04 (2014.01); H01L 31/0224 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0376 (2013.01); H01L 25/042 (2013.01); H01L 27/142 (2013.01); H01L 31/022425 (2013.01); H01L 31/04 (2013.01); H01L 31/06 (2013.01); H01L 31/068 (2013.01); H01L 31/18 (2013.01); H01L 31/1804 (2013.01); H01L 31/1876 (2013.01); H01L 2924/0002 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract

A method for manufacturing a solar cell includes preparing a semiconductor substrate having a first conductivity type dopant; ion-implanting a pre-amorphization elements into a front surface of the semiconductor substrate to form an amorphous layer; and forming an emitter layer by ion-implanting second conductivity type dopant into the front surface of the semiconductor substrate. The method then further includes heat-treating the layers to activate the second conductivity type dopant. The method further includes forming a back surface field layer at a back surface of the semiconductor substrate by ion-implanting a first conductivity type dopant.


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