The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 06, 2016

Filed:

Sep. 16, 2015
Applicant:

Fujifilm Corporation, Tokyo, JP;

Inventors:

Masahiro Takata, Kanagawa, JP;

Atsushi Tanaka, Kanagawa, JP;

Masayuki Suzuki, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); C01G 15/00 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); C01G 15/00 (2013.01); C01G 15/006 (2013.01); H01L 21/02422 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02614 (2013.01); H01L 21/02628 (2013.01); H01L 21/02664 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); C01P 2002/74 (2013.01); C01P 2006/40 (2013.01);
Abstract

Provided is a metal oxide film, including a component having a peak position, in an XPS spectrum thereof, within a range corresponding to a binding energy of from 402 eV to 405 eV, the metal oxide film satisfying a relationship represented by Equation (1): A/(A+B)≧0.39, when an intensity of peak energy attributed to nitrogen 1s electron is obtained by peak separation, and a manufacturing method of the same, an oxide semiconductor film, a thin-film transistor, a display apparatus, an image sensor, and an X-ray sensor. In Equation (1), A represents a peak area of the component having a peak position within a range corresponding to a binding energy of from 402 eV to 405 eV, and B represents a peak area of a component having a peak position within a range corresponding to a binding energy of from 406 eV to 408 eV.


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