The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2016
Filed:
Sep. 02, 2015
Satoshi Inaba, Seongnam-si, KR;
Satoshi Inaba, Seongnam-si, KR;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Abstract
According to one embodiment, a semiconductor device includes a semiconductor substrate having a trench and including an active area including a channel area formed along an inner surface of the trench and source/drain areas formed at both ends of the channel area and sandwiching the trench, a gate insulating film formed on the inner surface of the trench, and a gate electrode formed in the trench in which the gate insulating film is provided. A main surface of the semiconductor substrate has {100} plane orientation, a portion of the channel area parallel to a side surface of the trench has {110} channel plane orientation and has <100> channel orientation in a channel length direction, and tensile stress in the channel length direction and compressive stress in a channel width direction are applied to the portion of the channel area parallel to the side surface of the trench.