The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2016
Filed:
Apr. 20, 2015
Applicant:
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Inventors:
Peter Moens, Zottegem, BE;
Piet Vanmeerbeek, Sleidinge, BE;
John Michael Parsey, Jr., Phoenix, AZ (US);
Assignee:
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 29/0603 (2013.01); H01L 29/0847 (2013.01); H01L 29/2003 (2013.01); H01L 29/4236 (2013.01); H01L 29/66522 (2013.01); H01L 29/66666 (2013.01);
Abstract
An electronic device can include a vertical III-V transistor having a gate electrode and a channel region within a homostructure. The channel region can be disposed between a first portion and a second portion of the gate electrode. In an embodiment, the III-V transistor can be an enhancement-mode GaN transistor, and in a particular embodiment, the drain, source, and channel regions can include the same conductivity type.