The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2016
Filed:
Jun. 19, 2014
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Junjie Xiong, Suwon-si, KR;
Dongho Cha, Seongnam-si, KR;
Myung Jin Kang, Yongin-si, KR;
Kihoon Do, Hwaseong-si, KR;
Assignee:
Samsung Electronics Co, Ltd., , KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/165 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41725 (2013.01); H01L 21/823814 (2013.01); H01L 29/165 (2013.01); H01L 29/66545 (2013.01); H01L 29/66636 (2013.01); H01L 29/7848 (2013.01); H01L 29/665 (2013.01); H01L 29/6656 (2013.01);
Abstract
Provided are semiconductor devices and methods of manufacturing the same. The methods include providing a substrate including a first region and a second region, forming first mask patterns in the first region, and forming second mask patterns having an etch selectivity with respect to the first mask patterns in the second region. The first mask patterns and the second mask patterns are formed at the same time.