The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 06, 2016

Filed:

Mar. 23, 2015
Applicant:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Inventor:

Leonardo Fragapane, Catania, IT;

Assignee:

STMicroelectronics S.r.l., Agrate Brianza, IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 31/0312 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 21/761 (2006.01); H01L 21/266 (2006.01); H01L 21/82 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/063 (2013.01); H01L 21/266 (2013.01); H01L 21/761 (2013.01); H01L 21/8213 (2013.01); H01L 29/1608 (2013.01); H01L 29/7393 (2013.01); H01L 29/7802 (2013.01); H01L 29/7816 (2013.01);
Abstract

An integrated device has: a structural layer of semiconductor material doped with a first conductivity type and having a top surface defining a plane; a functional region, doped with a second conductivity type, arranged in an active area of the structural layer at the top surface, in the proximity of an edge area of the integrated device, which externally surrounds the active area; and an edge termination region, doped with the second conductivity type, joined to the functional region and arranged in the edge area. The edge termination region has a doping profile and a junction depth that vary in a first direction parallel to the plane.


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