The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 06, 2016

Filed:

Oct. 14, 2014
Applicant:

Sony Corporation, Tokyo, JP;

Inventor:

Terumi Kambe, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14623 (2013.01); H01L 27/1464 (2013.01); H01L 27/14603 (2013.01); H01L 27/14612 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14641 (2013.01); H01L 27/14645 (2013.01); H01L 27/14685 (2013.01); H01L 27/14687 (2013.01);
Abstract

There is provided a solid-state imaging device including: a semiconductor substrate that is formed with a photodiode for each pixel; a light shielding film that is laminated on the semiconductor substrate on a side of a light irradiated surface which is irradiated with light, and is formed to include an opening corresponding to a spot in which at least the photodiode is arranged; and a photoelectric conversion film that is laminated to cover the light irradiated surface of the semiconductor substrate and the light shielding film, and is configured to generate an electrical charge by absorbing light. The photoelectric conversion film is formed of a material which has higher light absorptivity than light absorptivity of the semiconductor substrate.


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