The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2016
Filed:
Mar. 20, 2015
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Renesas Electronics Corporation, Tokyo, JP;
Abstract
A memory gate is formed of a first memory gate including a second gate insulating film made of a second insulating film and a first memory gate electrode, and a second memory gate including a third gate insulating film made of a third insulating film and a second memory gate electrode. In addition, the lower surface of the second memory gate electrode is located lower in level than the lower surface of the first memory gate electrode. As a result, during an erase operation, an electric field is concentrated on the corner portion of the first memory gate electrode which is located closer to a selection gate and a semiconductor substrate and on the corner portion of the second memory gate electrode which is located closer to the first memory gate and the semiconductor substrate. This allows easy injection of holes into each of the second and third insulating films.