The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 06, 2016

Filed:

Sep. 16, 2015
Applicant:

Infineon Technologies Americas Corp., El Segundo, CA (US);

Inventors:

Eung San Cho, Torrance, CA (US);

Dan Clavette, Greene, RI (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/34 (2006.01); H01L 23/495 (2006.01); H01L 23/66 (2006.01); H01L 49/02 (2006.01); H01L 29/778 (2006.01); H02M 3/158 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49575 (2013.01); H01L 23/66 (2013.01); H01L 28/10 (2013.01); H01L 29/7787 (2013.01); H02M 3/158 (2013.01); H02M 3/1588 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/181 (2013.01); H01L 2924/19107 (2013.01);
Abstract

In one implementation, a semiconductor package includes a first patterned conductive carrier including partially etched segments. The semiconductor package also includes a control FET having a control drain attached to a first partially etched segment of the first patterned conductive carrier. In addition, the semiconductor package includes a sync FET having a sync source and a sync gate attached to respective second and third partially etched segments of the first patterned conductive carrier. The semiconductor package further includes a second patterned conductive carrier having a switch node segment situated over a control source of the control FET and over a sync drain of the sync FET, as well as an inductor coupled between the switch node segment and an output segment of the second patterned conductive carrier.


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