The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2016
Filed:
Aug. 10, 2015
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Bin Liu, Suwon-si, KR;
Sungmin Kim, Bupyeong-gu, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Methods for manufacturing a semiconductor device including a field effect transistor include forming first fins protruding from a substrate including a first region and a second region, the first fins including silicon-germanium (SiGe), forming a first mask pattern to expose the first fins disposed in the second region, the first mask pattern covering the first fins disposed in the first region, oxidizing the first fins in the second region to form second fins in the second region, and forming germanium (Ge)-rich layers each disposed on a surface of a respective one of the second fins.