The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2016
Filed:
Feb. 01, 2016
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Katsumi Yamamoto, Yokkaichi, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Abstract
A method for manufacturing a semiconductor device includes forming an insulating layer on a semiconductor layer; forming a metal layer on the insulating layer; and forming a first interconnect by selectively etching the metal layer. The first interconnect is electrically connected to the semiconductor layer and has a loop configuration. The method includes forming a first mask layer covering the first interconnect and the insulating layer; and forming a second mask layer on the first mask layer. The second mask layer has a first opening over a portion of the first interconnect. The method further includes exposing the portion of the first interconnect by selectively removing the first mask layer using the second mask layer; and forming a second interconnect by selectively removing the portion of the first interconnect using the first mask layer. The second interconnect has two ends and is electrically connected to the semiconductor layer.