The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 06, 2016

Filed:

Jun. 12, 2012
Applicants:

Arnaud Etcheberry, Colombes, FR;

Anne-marie Goncalves, Marly le Roi, FR;

Charles Mathieu, Bonnelles, FR;

Jacky Vigneron, Vernouillet, FR;

Nicolas Mézailles, Saint Maurice Montcouronne, FR;

Francoise Hervagault, Orsay, FR;

Elaine Le Floch, Orsay, FR;

Clémence Le Floch, Orsay, FR;

Paul Le Floch, Orsay, FR;

Inventors:

Arnaud Etcheberry, Colombes, FR;

Anne-Marie Goncalves, Marly le Roi, FR;

Charles Mathieu, Bonnelles, FR;

Jacky Vigneron, Vernouillet, FR;

Nicolas Mézailles, Saint Maurice Montcouronne, FR;

Pascal Le Floch, Versailles Cédex, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/322 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3228 (2013.01); H01L 21/02118 (2013.01); H01L 21/02282 (2013.01); H01L 21/02323 (2013.01); H01L 21/306 (2013.01); H01L 29/0607 (2013.01);
Abstract

A method for chemically passivating a surface of a product made of a III-V semiconductor material in which a) a P(N) polymer film is formed by deposition in a solvent comprising liquid ammonia. The film is formed by deposition, without electrochemical assistance, in the solvent, in the presence of an oxidizing chemical additive comprising phosphorous and generating electrical charge carriers in said surface.


Find Patent Forward Citations

Loading…