The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2016
Filed:
May. 27, 2015
Applicant:
Fujifilm Corporation, Tokyo, JP;
Inventors:
Yoshinori Nishiwaki, Shizuoka, JP;
Tetsuya Kamimura, Shizuoka, JP;
Tadashi Inaba, Shizuoka, JP;
Atsushi Mizutani, Shizuoka, JP;
Assignee:
FUJIFILM Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/3213 (2006.01); C09K 13/00 (2006.01); H01L 21/033 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32134 (2013.01); C09K 13/00 (2013.01); H01L 21/02063 (2013.01); H01L 21/0332 (2013.01); H01L 21/32139 (2013.01); H01L 21/31144 (2013.01);
Abstract
An etching method containing the step of processing a substrate having a first layer containing titanium nitride (TiN) and a second layer containing a transition metal by bringing an etching liquid into contact with the substrate and thereby removing the first layer, wherein the first layer has a surface oxygen content from 0.1 to 10% by mole, and wherein the etching liquid comprises an ammonia compound and an oxidizing agent, and has a pH of from 7 to 14.