The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2016
Filed:
Jun. 01, 2015
Applicant:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Inventors:
Mari Matsumoto, Kanagawa, JP;
Kosuke Tatsumura, Kanagawa, JP;
Koichiro Zaitsu, Kanagawa, JP;
Shinichi Yasuda, Tokyo, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 17/16 (2006.01); H01L 27/112 (2006.01); G11C 16/10 (2006.01);
U.S. Cl.
CPC ...
G11C 17/16 (2013.01); G11C 16/10 (2013.01); H01L 27/11206 (2013.01);
Abstract
A nonvolatile memory according to an embodiment includes a memory cell, the memory cell including: a memory transistor including a source, a drain, a gate electrode disposed above a channel between the source and the drain, and a gate insulating film disposed between the channel and the gate electrode; and a fuse element disposed between the gate electrode and a wiring line to which the gate electrode of the memory transistor is connected.