The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 06, 2016

Filed:

Oct. 12, 2011
Applicants:

Kazuhiro Nakajima, Ibaraki, JP;

Tomotake Nashiki, Ibaraki, JP;

Hideo Sugawara, Ibaraki, JP;

Inventors:

Kazuhiro Nakajima, Ibaraki, JP;

Tomotake Nashiki, Ibaraki, JP;

Hideo Sugawara, Ibaraki, JP;

Assignee:

NITTO DENKO CORPORATION, Ibaraki-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 3/10 (2006.01); B32B 3/14 (2006.01); B32B 7/02 (2006.01); G06F 3/044 (2006.01); G06F 3/045 (2006.01);
U.S. Cl.
CPC ...
G06F 3/044 (2013.01); G06F 3/045 (2013.01); G06F 2203/04103 (2013.01); Y10T 428/2495 (2015.01); Y10T 428/24802 (2015.01); Y10T 428/24868 (2015.01);
Abstract

The present invention provides a transparent conductive film in which the difference in visibility between the pattern portion and the pattern opening portion is kept small even when a transparent conductive layer is patterned. The transparent conductive film has a first dielectric layer, a second dielectric layer, and a transparent conductive layer in this order on a transparent film substrate, a thickness dof the first dielectric layer is larger than a thickness dof the second dielectric layer, the thickness dof the first dielectric layer is 8 to 40 nm and the thickness dof the second dielectric layer is 5 to 25 nm, and a difference between the thickness dof the first dielectric layer and the thickness dof the second dielectric layer, d-d, is 3 to 30 nm.


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