The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 06, 2016

Filed:

May. 10, 2013
Applicants:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Cheil Industries Inc., Gumi-si, Gyeongsangbuk-do, KR;

Inventors:

Kyoung Ah Oh, Euiwang-si, KR;

Hyung Jun Kim, Suwon-si, KR;

Moon Yeon Lee, Euiwang-si, KR;

Myung Sup Jung, Seongnam-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02F 1/03 (2006.01); G02F 1/07 (2006.01); G02B 5/30 (2006.01); G02B 27/28 (2006.01);
U.S. Cl.
CPC ...
G02B 5/3083 (2013.01);
Abstract

An embodiment of an optical film includes: a polarization layer; a first phase retardation layer; a second phase retardation layer; and a light blocking layer disposed between the first phase retardation layer and the second phase retardation layer and extending along a circumference of the second phase retardation layer, wherein the polarization layer is disposed on the first phase retardation, the first phase retardation layer is disposed on the second phase retardation layer, an in-plane retardation value of the first phase retardation layer at a standard wavelength of about 550 nanometers is in a range from about 240 nanometers to about 300 nanometers, and an in-plane retardation value of the second phase retardation layer at the standard wavelength is in a range from about 110 nanometers to about 160 nanometers.


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