The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2016
Filed:
Mar. 12, 2013
Applicant:
Arizona Board of Regents, a Body Corporate of the State of Arizona Acting for and on Behalf of Arizona State University, Scottsdale, AZ (US);
Inventors:
Yong-Hang Zhang, Scottsdale, AZ (US);
Jing-Jing Li, Tempe, AZ (US);
Swee Hoe Lim, San Jose, CA (US);
Assignee:
Arizona Board of Regents on behalf of Arizona State University, Scottsdale, AZ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02S 50/00 (2014.01); G01R 31/26 (2014.01); G01R 31/40 (2014.01); H02S 50/10 (2014.01);
U.S. Cl.
CPC ...
G01R 31/2605 (2013.01); H02S 50/00 (2013.01); H02S 50/10 (2014.12);
Abstract
A pulsed voltage bias method and/or pulsed light bias method may be used to reduce, minimize, and/or eliminate external quantum efficiency measurement artifacts of multi-junction solar cells, for example artifacts caused by the shunt effect. In this manner, multi-junction solar cells may be designed and constructed with improved performance, efficiency, and the like.