The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2016
Filed:
Sep. 17, 2015
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Xavier Baillin, Crolles, FR;
Abstract
This structure, that is applicable particularly to manufacturing of <<Beyond CMOS>> type systems comprises a substrate () with opposite first and second faces, a cap () with opposite first and second faces, the first face of the cap being fixed to the first face of the substrate, at least one cavity () defined between the cap and the substrate, at least one nano-object () in the cavity, and first doped zones () that are formed in the substrate, on the first face of the substrate, the nano-object being electrically connected to the first doped zones. According to the invention, the structure also comprises second doped zones () that are formed in the cap, on the first face of the cap and that are at least partially in direct contact with the first doped zones, and means of making contact () between the first and the second face of the cap and that open up on the second doped zones.