The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2016
Filed:
Jul. 12, 2013
Hewlett-packard Development Company, L.p., Houston, TX (US);
James Elmer Abbott, Jr., Corvallis, OR (US);
Arun K. Agarwal, Corvallis, OR (US);
Roberto A. Pugliese, Corvallis, OR (US);
Greg Scott Long, Corvallis, OR (US);
Stephen Horvath, San Diego, CA (US);
Douglas A. Keszler, Corvallis, OR (US);
John Wager, Corvallis, OR (US);
Kristopher Olsen, Corvallis, OR (US);
John McGlone, Corvallis, OR (US);
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P., Houston, TX (US);
Abstract
The present disclosure is drawn to a thermal inkjet printhead stack with an amorphous thin metal protective layer, comprising an insulated substrate, a resistor applied to the insulated substrate, a resistor passivation layer applied to the resistor, and an amorphous thin metal protective layer applied to the resistor passivation layer. The amorphous thin metal protective layer can comprise from 5 atomic % to 90 atomic % of a metalloid of carbon, silicon, or boron. The film can also include a first and second metal, each comprising from 5 atomic % to 90 atomic % of titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, or platinum. The second metal is different than the first metal, and the metalloid, the first metal, and the second metal account for at least 70 atomic % of the amorphous thin metal protective layer.