The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2016
Filed:
Oct. 22, 2015
Applicant:
Qing Peng Yuan, Shanghai, CN;
Inventor:
Qing Peng Yuan, Shanghai, CN;
Assignee:
GIANTEC SEMICONDUCTOR, LTD. INC., Shanghai, CN;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G05F 1/10 (2006.01); H02M 3/07 (2006.01);
U.S. Cl.
CPC ...
H02M 3/07 (2013.01);
Abstract
A charge pump device with NMOS transistor circuit is provided for low voltage operation. The charge pump stage, comprising four NMOS transistors and three capacitors, is configured to alleviate the substrate body effect and the charge transfer loss. The charge pump circuit can be constructed on a p-type semiconductor substrate directly without deep N well isolation. The circuit is driven by two non-overlapping complementary clock signals, which can be generated easily with an integrated fabrication. The charge pump device can be implemented with a multiple stage to provide a stable high voltage output.