The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2016
Filed:
Mar. 09, 2015
Applicant:
Peregrine Semiconductor Corporation, San Diego, CA (US);
Inventors:
Vadim Kushner, Solana Beach, CA (US);
Erica Poole, San Diego, CA (US);
Assignee:
Peregrine Semiconductor Corporation, San Diego, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H02H 9/04 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H02H 9/04 (2013.01); H01L 27/0266 (2013.01);
Abstract
Systems, methods, and apparatus for ESD protection with adjustable trigger voltage decoupled from DC breakdown voltage for semiconductor devices including field effect transistors (FETs), and particularly to metal-oxide-semiconductors (MOSFETs) fabricated on silicon-on-insulator ('SOI') and silicon-on-sapphire ('SOS') substrates are described. The apparatus and method are configured to change reverse biased drain junctions which in turn can control the DC breakdown voltage and the trigger voltage.