The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2016

Filed:

Aug. 21, 2013
Applicant:

University of Washington Through Its Center for Commercialization, Seattle, WA (US);

Inventors:

Samson A. Jenekhe, Seattle, WA (US);

Haiyan Li, Seattle, WA (US);

Felix Sunjoo Kim, Seattle, WA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/00 (2006.01); C07D 221/18 (2006.01); C07D 471/06 (2006.01); C07D 471/22 (2006.01); C07D 495/16 (2006.01); C07D 519/00 (2006.01); C08G 61/12 (2006.01); C09K 11/06 (2006.01); H01L 51/05 (2006.01); H01L 51/44 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0072 (2013.01); C07D 221/18 (2013.01); C07D 471/06 (2013.01); C07D 471/22 (2013.01); C07D 495/16 (2013.01); C07D 519/00 (2013.01); C08G 61/122 (2013.01); C08G 61/126 (2013.01); C09K 11/06 (2013.01); H01L 51/0036 (2013.01); H01L 51/0039 (2013.01); H01L 51/0043 (2013.01); H01L 51/0053 (2013.01); H01L 51/0068 (2013.01); H01L 51/0071 (2013.01); C08G 2261/12 (2013.01); C08G 2261/18 (2013.01); C08G 2261/3142 (2013.01); C08G 2261/3223 (2013.01); C08G 2261/3241 (2013.01); C08G 2261/3243 (2013.01); C08G 2261/61 (2013.01); C08G 2261/92 (2013.01); C09K 2211/1033 (2013.01); C09K 2211/1077 (2013.01); C09K 2211/1081 (2013.01); C09K 2211/1085 (2013.01); H01L 51/0026 (2013.01); H01L 51/0545 (2013.01); H01L 51/0558 (2013.01); H01L 51/44 (2013.01);
Abstract

Novel acenaphthylene imide-derived semiconductor materials, including small molecule compounds, polymers and oligomers. Also provided are methods for making the novel semiconductor materials and the use of the novel semiconducting materials in electronic or optoelectronic device. In some embodiments, the novel semiconducting materials are used as n-channel component in organic field-effect transistors as well as complementary electronic circuits including inverters. High mobility can be achieved.


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