The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2016

Filed:

Jan. 17, 2014
Applicant:

Sony Corporation, Tokyo, JP;

Inventor:

Mitsuharu Shoji, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/82 (2006.01); H01L 43/00 (2006.01); H01L 43/02 (2006.01); B82Y 25/00 (2011.01); G11C 11/16 (2006.01); H01F 10/32 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); B82Y 25/00 (2013.01); G11C 11/16 (2013.01); H01F 10/3286 (2013.01); H01F 10/3254 (2013.01); H01F 10/3263 (2013.01);
Abstract

A nonvolatile magnetic memory device with a magnetoresistance-effect element includes a laminated structure, a first wiring line, and a second wiring line. The laminated structure includes a recording layer in which an axis of easy magnetization is oriented in a perpendicular direction. The first wiring line is electrically connected to a lower part of the laminated structure. The second wiring line electrically connected to an upper part of the laminated structure. A high Young's modulus region is provided on a side surface of the laminated structure. A Young's modulus value of a material of the high Young's modulus region is greater than a Young's modulus value of a material of the recording layer.


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