The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2016

Filed:

Sep. 18, 2009
Applicants:

Tsun-kai Ko, Hsinchu, TW;

Schang-jing Hon, Hsinchu, TW;

Chien-kai Chung, Hsinchu, TW;

Hui-chun Yeh, Hsinchu, TW;

An-ju Lin, Hsinchu, TW;

Chien-fu Shen, Hsinchu, TW;

Chen Ou, Hsinchu, TW;

Inventors:

Tsun-Kai Ko, Hsinchu, TW;

Schang-Jing Hon, Hsinchu, TW;

Chien-Kai Chung, Hsinchu, TW;

Hui-Chun Yeh, Hsinchu, TW;

An-Ju Lin, Hsinchu, TW;

Chien-Fu Shen, Hsinchu, TW;

Chen Ou, Hsinchu, TW;

Assignee:

EPISTAR CORPORATION, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/38 (2010.01); H01L 33/14 (2010.01); H01L 33/22 (2010.01); H01L 33/42 (2010.01); H01L 33/44 (2010.01);
U.S. Cl.
CPC ...
H01L 33/382 (2013.01); H01L 33/14 (2013.01); H01L 33/22 (2013.01); H01L 33/42 (2013.01); H01L 33/44 (2013.01); H01L 2924/0002 (2013.01);
Abstract

An optoelectronic semiconductor device in accordance with an embodiment of present invention includes a conversion unit having a first side; an electrical connector; a contact layer having an outer perimeter; and at least three successive discontinuous-regions formed along the outer perimeter and having at least one different factor; wherein the electrical connector, the contact layer, and the discontinuous-regions are formed on the first side of the conversion unit.


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