The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2016

Filed:

Oct. 11, 2012
Applicant:

Sandia Corporation, Albuquerque, NM (US);

Inventors:

Anna Tauke-Pedretti, Albuquerque, NM (US);

Jeffrey Cederberg, Albuquerque, NM (US);

Gregory N. Nielson, Albuquerque, NM (US);

Murat Okandan, Edgewood, NM (US);

Jose Luis Cruz-Campa, Albuquerque, NM (US);

Assignee:

Sandia Corporation, Albuquerque, NM (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/043 (2014.01); H01L 31/0687 (2012.01); H01L 31/0693 (2012.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/043 (2014.12); H01L 31/0687 (2013.01); H01L 31/0693 (2013.01); H01L 31/1844 (2013.01); Y02E 10/544 (2013.01);
Abstract

A microsystems-enabled multi-junction photovoltaic (MEM-PV) cell includes a first photovoltaic cell having a first junction, the first photovoltaic cell including a first semiconductor material employed to form the first junction, the first semiconductor material having a first bandgap. The MEM-PV cell also includes a second photovoltaic cell comprising a second junction. The second photovoltaic cell comprises a second semiconductor material employed to form the second junction, the second semiconductor material having a second bandgap that is less than the first bandgap, the second photovoltaic cell further comprising a first contact layer disposed between the first junction of the first photovoltaic cell and the second junction of the second photovoltaic cell, the first contact layer composed of a third semiconductor material having a third bandgap, the third bandgap being greater than or equal to the first bandgap.


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