Solid-state image sensing device with electrode implanted into deep trench

Abstract

A solid-state image sensing device is provided including a first semi-conducting layer of first conductivity, a second semi-conducting layer of first conductivity disposed on the first semi-conducting layer, a semiconductor region of second conductivity different from the first conductivity disposed in the second semi-conducting layer, a deep trench configured to isolate a plurality of neighboring pixels from each other, and an electrode implanted into the deep trench, where the semiconductor region of second conductivity, the second semi-conducting layer, and the first semi-conducting layer are disposed in that order from a proximal side to a distal side, the second semi-conducting layer is split by the deep trench into sections that correspond to the pixels, an impurity concentration of first conductivity of the first semi-conducting layer is higher than an impurity concentration of first conductivity of the second semi-conducting layer, and the deep trench contacts the first semi-conducting layer.