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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9508867 B1

PDFFull Text
Date of Patent:
Nov. 29, 2016

Filed:

Sep. 29, 2014

Thin film transistor, array substrate, method of fabricating same, and display device

Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Dongsheng Li, Beijing, CN;

Ning Chen, Beijing, CN;

Xingdong Liu, Beijing, CN;

Wei Guo, Beijing, CN;

Assignee:

Boe Technology Group Co., Ltd., Beijing, CN;

Attorney:

Calfee, Halter & Griswold LLP

Primary Examiner:

Whitney T Moore

Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); H01L 27/1218 (2013.01); H01L 27/1237 (2013.01); H01L 27/1259 (2013.01); H01L 29/4175 (2013.01); H01L 29/41733 (2013.01); H01L 29/42384 (2013.01); H01L 29/66742 (2013.01); H01L 29/66765 (2013.01); H01L 29/78603 (2013.01); H01L 29/78606 (2013.01);
Abstract

A thin film transistor, an array substrate, a method of fabricating the same, and a display device are provided. The thin film transistor includes a substrate plate, and an active layer, a source, and a drain which are arranged on the substrate plate. The thin film transistor also includes an inclined portion which is arranged on the substrate plate in an inclined manner. The active layer is at least partially arranged on the inclined portion. The source and the drain are arranged over the active layer and at least partially overlap the active layer. In this manner, the size of the thin film transistor in a direction parallel with the substrate plate can be effectively reduced.

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