The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2016
Filed:
Mar. 20, 2015
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Jongbaek Seon, Yongin-si, KR;
Seokjun Seo, Cheonan-si, KR;
Taesang Kim, Seoul, KR;
Myungkwan Ryu, Yongin-si, KR;
Seongho Cho, Gwacheon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
According to example embodiments, a transistor includes a gate, a channel layer that is separate from the gate, a gate insulating layer between the gate and the channel layer, and a source electrode and a drain electrode respectively contacting a first region and a second region of the channel layer. The gate insulating layer includes an impurity metal containing region that includes an impurity metal and contacts the channel layer. The gate insulating layer includes an impurity metal non-containing region contacting the gate that is not doped with the impurity metal.