The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2016
Filed:
Mar. 11, 2014
Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;
Toru Oka, Kiyosu, JP;
Takahiro Sonoyama, Kiyosu, JP;
Toyoda Gosei Co., Ltd., Kiyosu-shi, Aichi-ken, JP;
Abstract
A semiconductor device comprises: a gate insulating filmstacked on a semiconductor layer; and a gate electrode layerstacked on the gate insulating filmand provided to apply a voltage via the gate insulating filmfor formation of a channel in the semiconductor layer. The gate insulating filmincludes: a first insulation filmstacked on the semiconductor layer; and a second insulation filmbetween the first insulation filmand the gate electrode layer. When ∈and ∈respectively represent relative permittivities of the first and second insulation film, d[nm] and d[nm] represent film thicknesses of the first and second insulation film, and Vmax [V] represents a rated voltage applicable to the gate electrode layer, the semiconductor device is configured to satisfy ∈and meet (C1):