The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2016
Filed:
Oct. 19, 2015
Applicant:
Mediatek Inc., Hsin-Chu, TW;
Inventors:
Assignee:
MEDIATEK INC., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/8244 (2006.01); H01L 49/02 (2006.01); H01L 21/265 (2006.01); H01L 21/268 (2006.01); H01L 21/28 (2006.01); H01L 21/324 (2006.01); H01L 27/06 (2006.01); H01L 21/762 (2006.01); H01L 29/06 (2006.01); H01L 29/49 (2006.01); H01L 21/02 (2006.01); H01L 21/266 (2006.01); H01L 29/167 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/20 (2013.01); H01L 21/02532 (2013.01); H01L 21/02595 (2013.01); H01L 21/265 (2013.01); H01L 21/266 (2013.01); H01L 21/268 (2013.01); H01L 21/26506 (2013.01); H01L 21/26513 (2013.01); H01L 21/28035 (2013.01); H01L 21/324 (2013.01); H01L 21/76224 (2013.01); H01L 21/8234 (2013.01); H01L 21/823437 (2013.01); H01L 27/0629 (2013.01); H01L 29/0649 (2013.01); H01L 29/0653 (2013.01); H01L 29/167 (2013.01); H01L 29/4916 (2013.01); H01L 27/0207 (2013.01);
Abstract
A method of fabricating an integrated circuit is also provided. The method includes forming a first polysilicon region having an initial grain size on a substrate. The first polysilicon region is implanted with a first dopant of a first conductivity type and a second dopant. After the implantation, the first polysilicon region has a first grain size larger than the initial grain size. Then, a laser rapid thermal annealing process is performed to the first polysilicon region.