The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2016

Filed:

Jul. 06, 2015
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventor:

Hee Dong Choi, Seosan-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 27/00 (2006.01); H01L 27/12 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1237 (2013.01); H01L 27/127 (2013.01); H01L 27/1225 (2013.01); H01L 29/0847 (2013.01); H01L 29/41733 (2013.01); H01L 29/66765 (2013.01); H01L 29/7869 (2013.01); H01L 29/78669 (2013.01); H01L 29/78678 (2013.01);
Abstract

A thin film transistor array substrate is discussed. The thin film transistor array substrate includes, according to one embodiment, gate and data lines crossing each other, a gate insulation film, a gate electrode, an active layer, an etch stop layer formed on the active layer to define a channel region of the active layer, and a source electrode and a drain electrode formed on the active layer. The etch stop layer is between the source and drain electrodes spaced apart from the etch stop layer. The source electrode and the drain electrode include a first electrode layer and a second electrode layer disposed on the first electrode. The first electrode layer is formed from a dry-etchable material and the second electrode layer is formed from a wet-etchable material.


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