The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2016
Filed:
Apr. 02, 2015
Altera Corporation, San Jose, CA (US);
Weimin Zhang, San Jose, CA (US);
Yanzhong Xu, Santa Clara, CA (US);
Altera Corporation, San Jose, CA (US);
Abstract
An illustrative finFET comprises first, second, and third pluralities of fins having gate structures and source and drain regions formed on the fins so that first PMOS transistors are formed in first epitaxial regions on the first plurality of fins, NMOS transistors are formed in second epitaxial regions on the second plurality of fins and second PMOS transistors are formed in third epitaxial regions on the third plurality of fins. In three embodiments, the fins are formed in silicon; the first epitaxial region is silicon germanium; the second region is silicon; and the third region is 1) silicon, 2) silicon carbide, or 3) silicon or silicon carbide on a silicon carbide cladding. In another embodiment, the third epitaxial regions are wide band gap semiconductors formed on wide band gap semiconductor fins. In another embodiment, all the fins and epitaxial regions are wide band gap semiconductors.