The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2016
Filed:
Aug. 26, 2013
Applicants:
Jun Saito, Nagoya, JP;
Satoru Machida, Nagakute, JP;
Yusuke Yamashita, Nagoya, JP;
Inventors:
Assignee:
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 27/06 (2006.01); H01L 29/872 (2006.01); H01L 29/739 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 29/1095 (2013.01); H01L 29/7397 (2013.01); H01L 29/872 (2013.01);
Abstract
A technology capable of suppressing a fluctuation in voltage in a diode region is provided. A resistance value between the emitter electrode and the lower body region is lower than a resistance value between the anode electrode and the lower anode region when the semiconductor device operates as a diode. A quantity of holes between the emitter electrode and the second barrier region is smaller than a quantity of holes between the anode electrode and the first barrier region.