The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2016

Filed:

Dec. 04, 2013
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Hideo Komo, Tokyo, JP;

Takeshi Omaru, Tokyo, JP;

Shoji Saito, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/36 (2006.01); H02M 1/32 (2007.01); H01L 25/18 (2006.01); H02M 1/08 (2006.01); H01L 23/00 (2006.01); H03K 17/082 (2006.01); H01L 23/053 (2006.01); H01L 23/34 (2006.01); H01L 23/367 (2006.01); H01L 23/373 (2006.01); H01L 23/492 (2006.01); H01L 23/552 (2006.01);
U.S. Cl.
CPC ...
H01L 25/18 (2013.01); H01L 23/00 (2013.01); H01L 23/053 (2013.01); H01L 23/34 (2013.01); H01L 23/36 (2013.01); H01L 23/3675 (2013.01); H01L 23/3736 (2013.01); H01L 23/4924 (2013.01); H01L 23/552 (2013.01); H01L 24/32 (2013.01); H01L 24/33 (2013.01); H01L 24/49 (2013.01); H01L 24/73 (2013.01); H02M 1/08 (2013.01); H03K 17/0828 (2013.01); H01L 2224/27013 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48108 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48139 (2013.01); H01L 2224/48175 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/83951 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/05032 (2013.01); H01L 2924/05042 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/10161 (2013.01); H01L 2924/10254 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/1203 (2013.01); H01L 2924/1207 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/15747 (2013.01); H01L 2924/15787 (2013.01); H01L 2924/19107 (2013.01); H01L 2924/20106 (2013.01); H01L 2924/20107 (2013.01); H01L 2924/20108 (2013.01); H01L 2924/30101 (2013.01); H02M 2001/325 (2013.01);
Abstract

The present invention relates to a semiconductor device used in power equipment. The semiconductor device includes: a base plate; an insulating substrate mounted on the base plate; a power switching element bonded to the insulating substrate with a solder layer; and the base plate, the insulating substrate, and the power switching element forming a module, a control substrate located above the module. The control substrate includes a variable gate voltage circuit measuring a collector-emitter voltage of the power switching element and changing a gate voltage such that the power switching element is supplied with given target power determined by a product of the collector-emitter voltage and a collector current.


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