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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9508678 B1

PDFFull Text
Expired
Date of Patent:
Nov. 29, 2016

Filed:

Jan. 21, 2015

Method of manufacturing a semiconductor device including applying ultrasonic waves to a ball portion of the semiconductor device

Applicant:

Renesas Electronics Corporation, Kawasaki, JP;

Inventor:

Naoki Kawanabe, Kawasaki, JP;

Assignee:

Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;

Attorney:

McGinn IP Law Group, PLLC

Primary Examiner:

Caleb Henry

Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/85 (2013.01); H01L 24/05 (2013.01); H01L 24/97 (2013.01); H01L 24/45 (2013.01); H01L 24/78 (2013.01); H01L 2224/02166 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05093 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/05557 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/45139 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/45565 (2013.01); H01L 2224/45664 (2013.01); H01L 2224/4845 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/48228 (2013.01); H01L 2224/48453 (2013.01); H01L 2224/48465 (2013.01); H01L 2224/49171 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/78301 (2013.01); H01L 2224/85181 (2013.01); H01L 2224/85205 (2013.01); H01L 2224/85206 (2013.01); H01L 2224/85345 (2013.01); H01L 2224/85365 (2013.01); H01L 2224/92247 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/181 (2013.01);
Abstract

A method of manufacturing a semiconductor device which improves the reliability of a semiconductor device. The method of manufacturing the semiconductor device includes the step of connecting a ball portion formed at the tip of a wire with a pad (electrode pad) of a semiconductor chip. The pad is comprised of an aluminum-based material and has a trench in its portion to be connected with the ball portion. The ball portion is comprised of a harder material than gold. The step of connecting the ball portion includes the step of applying ultrasonic waves to the ball portion.

Find Patent Forward Citations

Kawanabe, Naoki. (2016). Method of manufacturing a semiconductor device including applying ultrasonic waves to a ball portion of the semiconductor device (U.S. Patent No. 9508678). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9508678

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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