The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2016

Filed:

Jun. 08, 2015
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventors:

Nobutaka Ukigaya, Yokohama, JP;

Masao Ishioka, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/48 (2006.01); H01L 21/50 (2006.01); H01L 21/00 (2006.01); H01L 23/544 (2006.01); H01L 31/18 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 23/544 (2013.01); H01L 27/14698 (2013.01); H01L 31/1868 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 2223/5446 (2013.01); H01L 2223/54426 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A method of manufacturing a semiconductor device is provided. The method includes forming a passivation film on a substrate including a plurality of element regions and a scribe region, forming a trench in the passivation film in a region of the scribe region along an outer edge of each of the element regions, and forming a film on the passivation film in which the trench has been formed by coating. A depth of a first section in a first position of the trench is shallower than a depth of a second section in a second position of the trench. A width of the first section is wider than a width of the second section.


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