The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2016
Filed:
Jun. 20, 2014
Vishay-siliconix, Santa Clara, CA (US);
Naveen Tipirneni, Santa Clara, CA (US);
Deva Pattanayak, Saratoga, CA (US);
Vishay-Siliconix, Santa Clara, CA (US);
Abstract
During fabrication, a second oxide layer is disposed over a first region and a second region of a structure. The second region includes a first oxide layer between the second oxide layer and an epitaxial layer. The first region corresponds to an active region of a metal-insulator-semiconductor field effect transistor (MISFET), and a first-type dopant source region, a second-type dopant body region, and a second-type dopant implant region are formed in the first region. The second region corresponds to a termination region of the MISFET. A mask is formed over the second region, and parts of the second oxide layer and the first oxide layer that are exposed through the gaps are removed, thereby exposing the epitaxial layer. Second-type dopant is deposited into the epitaxial layer through the resultant openings in the first and second oxide layers, thereby forming field rings for the MISFET.