The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2016

Filed:

Aug. 26, 2015
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventor:

Sung-Ho Kim, Gyeonggi-do, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 17/16 (2006.01); G11C 29/00 (2006.01); G11C 17/18 (2006.01); G11C 11/406 (2006.01); G11C 11/4096 (2006.01); G11C 11/4091 (2006.01);
U.S. Cl.
CPC ...
G11C 29/783 (2013.01); G11C 11/406 (2013.01); G11C 11/4091 (2013.01); G11C 11/4096 (2013.01); G11C 17/16 (2013.01); G11C 17/18 (2013.01); G11C 29/76 (2013.01);
Abstract

A semiconductor memory device may include: a plurality of first to third memory cells, each memory cell being a DRAM memory cell; a plurality of fuses suitable for storing repair information for replacing failed first memory cells with corresponding second memory cells; a normal operation unit suitable for accessing and refreshing one or more of the first and second memory cells according to the repair information during a normal mode; and a repair operation unit suitable for providing the repair information from the fuses to the third memory cells during a boot-up mode, and for providing the repair information from the third memory cells to the normal operation unit and for refreshing the third memory cells during a normal mode.


Find Patent Forward Citations

Loading…