The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2016

Filed:

Feb. 27, 2012
Applicant:

Masami Endo, Kanagawa, JP;

Inventor:

Masami Endo, Kanagawa, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/40 (2006.01); G11C 19/28 (2006.01); G11C 19/18 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 19/28 (2013.01); G11C 19/184 (2013.01); G11C 16/0441 (2013.01);
Abstract

A memory element having a novel structure and a signal processing circuit including the memory element are provided. A first circuit, including a first transistor and a second transistor, and a second circuit, including a third transistor and a fourth transistor, are included. A first signal potential and a second signal potential, each corresponding to an input signal, are respectively input to a gate of the second transistor via the first transistor in an on state and to a gate of the fourth transistor via the third transistor in an on state. After that, the first transistor and the third transistor are turned off. The input signal is read out using both the states of the second transistor and the fourth transistor. A transistor including an oxide semiconductor in which a channel is formed can be used for the first transistor and the third transistor.


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