The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2016

Filed:

Apr. 03, 2015
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventor:

Sang Oh Lim, Gyeonggi-do, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/02 (2006.01); G11C 16/04 (2006.01); G11C 16/28 (2006.01); G11C 11/56 (2006.01); G11C 29/02 (2006.01); G11C 16/24 (2006.01);
U.S. Cl.
CPC ...
G11C 16/28 (2013.01); G11C 11/5642 (2013.01); G11C 16/0483 (2013.01); G11C 29/021 (2013.01); G11C 29/025 (2013.01); G11C 16/24 (2013.01); G11C 2211/5648 (2013.01);
Abstract

An operating method of a semiconductor device includes applying a read voltage to a selected word line of a selected memory block, among a plurality of memory blocks including cell strings coupled between bit lines and a source line, detecting a voltage of the source line by forming a channel in cell strings of the selected memory block, comparing the voltage of the source line with a reference voltage corresponding to the selected memory block, and performing a least significant bit (LSB) read operation on memory cells coupled to the selected word line when the voltage of the source line is greater than the reference voltage, as a result of the comparing, and performing a most significant bit (MSB) read operation on the memory cells when the voltage of the source line is less than the reference voltage, as the result of the comparing.


Find Patent Forward Citations

Loading…